Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopy

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 248-251

  Zhu, Z ^a,b   Brownlie, G D ^a   Horsburgh, G ^a   Thompson, P J ^a   Wang, S Y ^a   Prior, K A ^a   Cavenett, B C ^a  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; IONIZATION; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

ACCEPTORS; COMPENSATING PROCESSES; DONORS; IONIZATION ENERGIES; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562489     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00676-1     Document Type: Article

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