SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 321-324

Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe

(8) Brownlie, G D a Zhu, Z a,b Horsburgh, G a Steele, T a Thompson, P J a Wallace, J M a Prior, K A a Cavenett, B C a

a HERIOT WATT UNIVERSITY (United Kingdom)

b TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EXCITONS; IONIZATION; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SPECTROSCOPY; STRAIN;

IONIZATION ENERGY; NET ACCEPTOR CONCENTRATION; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; STRAIN EFFECTS; VALENCE BAND;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562202 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00768-7 Document Type: Article

Times cited : (7)

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