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Wei SH, Krakawer H. Local-density-functional calculation of the pressure-induced metallization of BaSe and BaTe. Phys Rev Lett. 55:1985;1200-1203.
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Andersen OK. Linear methods in band theory. Phys Rev B. 12:1975;3060-3083.
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Wood DM, Zunger A. A new method for diagonalizing large matrices. J Phys A. 18:1985;1343-1359.
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Bendt P, Zunger A. Simultaneous relaxation of nuclear geometries and electronic charge densities in electronic structure theories. Phys Rev Lett. 50:1983;1684-1688.
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2 is a stable compound, limiting the concentration of Ga-substituted-Be. It is suggested that introduction of hydrogen would assist solubility.
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2 is a stable compound, limiting the concentration of Ga-substituted-Be. It is suggested that introduction of hydrogen would assist solubility.
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0001074048
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This is the basic paper on values, trends and underlying physics of the band offsets of AIN-GaN-InN in both zinc blende and wurtzite structures
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Wei SH, Zunger A. Valence band splittings and band offsets of AIN, GaN and InN. Appl Phys Lett. 69:1996;2719-2721 This is the basic paper on values, trends and underlying physics of the band offsets of AIN-GaN-InN in both zinc blende and wurtzite structures.
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Wei SH, Zunger A. Chemical trends in band offsets of Zn and Mn based II-IV superlattices. Phys Rev B. 53:1995;R10457-R10460.
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Froye S, Zunger A, Mascarenhas A. Polarization fields and band offsets in GalnP/GaAs and ordered/disordered GalnP superlattices. Appl Phys Lett. 68:1996;2852-2854.
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O'Shea JJ, Reaves CM, DenBaars SP, Chin Ma, Narayanamurti V. Conduction band offsets in ordered GalnP/GaAs heterostructures studied by ballistic electron emission spectroscopy. Appl Phys Lett. 69:1996;3022-3024.
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This paper created much controversy in the field, because its measured ln/GaN offset of 1.05± -0.25 eV is 2 to 3 times larger than 'all' calculated values. It is still not clear if the calculated valence band edge, used in this paper to infer the offset, is sufficiently accurate. The issue is still open.
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Martin G, Botchkarev A, Rockett A, Morkoc H. Valence-band discontinuities of wurtzite GaN/AIN and lnN heterojunctions measured by X-ray photoemission spectroscopy. Appl Phys Lett. 68:1996;2541-2543 This paper created much controversy in the field, because its measured ln/GaN offset of 1.05± -0.25 eV is 2 to 3 times larger than 'all' calculated values. It is still not clear if the calculated valence band edge, used in this paper to infer the offset, is sufficiently accurate. The issue is still open.
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0000915740
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This paper uses the 6 × 6k.p method adapted from Efros and predicts the energies of as many as eight (!) excitonic transitions in CdSe dots as a function of size. The agreement with experiment, for the lowest excitons is spectacular.
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Norris DJ, Bawendi MG. Measurement and assignment of the size-dependent optical spectrum in CdSe quantum dots. Phys Rev B. 53:1996;16338 This paper uses the 6 × 6k.p method adapted from Efros and predicts the energies of as many as eight (!) excitonic transitions in CdSe dots as a function of size. The agreement with experiment, for the lowest excitons is spectacular.
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This is the natural sequel to [38] in that the fine structure of the global excitation seen in [38] is studied here. It resolves photon-assisted transitions and the exchange splitting. This is the basis for the exchange model described in [42].
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Norris DJ, Efros AL, Rosen M, Bawendi MG. Size dependence of exciton fine structure in CdSe quantum dots. Phys Rev B. 53:1996;16347-16354 This is the natural sequel to [38] in that the fine structure of the global excitation seen in [38] is studied here. It resolves photon-assisted transitions and the exchange splitting. This is the basis for the exchange model described in [42].
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Jiang H, Sing J. Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: and eight-band study. Phys Rev B. 56:1997;4696-4701.
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InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
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This paper gives a clear account of the effects of strain on the heavy-hole confined state in an InAs pyramidal quantum dot, embedded in GaAs. It formed the basis for extensive comparisons with experiments being the first realistic description of the electronic structure of such dots. However, the neglect of the effect of the light-hole band, and of coupling with either electron and hole bands is a limitation.
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Grundmann M, Stier O, Bimberg D. InAs/GaAs pyramidal quantum dots: strain distribution, optical phonons, and electronic structure. Phys Rev B. 52:1995;11969-11981 This paper gives a clear account of the effects of strain on the heavy-hole confined state in an InAs pyramidal quantum dot, embedded in GaAs. It formed the basis for extensive comparisons with experiments being the first realistic description of the electronic structure of such dots. However, the neglect of the effect of the light-hole band, and of coupling with either electron and hole bands is a limitation.
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Grundmann, M.1
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42
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0000686679
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Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton states
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This is the front runner paper on the role of quantum-size enhanced electron-hole exchange in dots. Whereas it neglects the potentially important long-range exchange interaction, it gives a clear and detailed account of the effects of short range exchange, shape and size of dot on the fine structure of the spectrum.
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Efros S, Rosen M, Kuno M, Nirmal M, Norris DJ, Bawendi M. Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: dark and bright exciton states. Phys Rev B. 54:1996;4843-4856 This is the front runner paper on the role of quantum-size enhanced electron-hole exchange in dots. Whereas it neglects the potentially important long-range exchange interaction, it gives a clear and detailed account of the effects of short range exchange, shape and size of dot on the fine structure of the spectrum.
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(1996)
Phys Rev B
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Efros, S.1
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Norris, D.J.5
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43
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Observation of the "dark exciton" in CdSe quantum dots
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Nirmal M, Norris DJ, Bawendi MG, Efros A, Rosen M. Observation of the "dark exciton" in CdSe quantum dots. Phys Rev Lett. 75:1995;3728-3731.
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Nirmal, M.1
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44
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0000686679
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Band-edge exciton in quantum dots of semiconductors with a degenerate valence-band-dark and bright exciton-states
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Nirmal M, Norris DJ, Bawendi MG, Efros A, Rosen M. Band-edge exciton in quantum dots of semiconductors with a degenerate valence-band-dark and bright exciton-states. Phys Rev B. 54:1995;4843-4856.
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Nirmal, M.1
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45
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0001455299
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Size-dependent spectroscopy of InP quantum dots
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Micic OI, Cheong HM, Fu H, Zunger A, Spragne JR, Mascarenhas A, Nozik AJ. Size-dependent spectroscopy of InP quantum dots. J Phys Chem B. 101:1997;4904-4912.
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Micic, O.I.1
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