Optimization of polysilicon encapsulated local oxidation of silicon: Cavity dimension effects on mechanical stress and gate oxide integrity

Journal of the Electrochemical Society

Volumn 145, Issue 5, 1998, Pages 1653-1667

  Badenes, Gonçal ^a,c   Rooyackers, Rita ^a   Jones, Stephen K ^b   Bazley, Dave ^b   Beanland, Richard ^b   De Wolf, Ingrid ^a   Deferm, Ludo ^a  

^a IMEC   (Belgium)

^b GEC Marconi Materials Technology Ltd   (United Kingdom)

^c ELECTROCHEMICAL SOCIETY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ENCAPSULATION; MOS DEVICES; OXIDATION; RAMAN SPECTROSCOPY; STRESSES; TRANSMISSION ELECTRON MICROSCOPY;

POLYSILICON ENCAPSULATED LOCAL OXIDATION OF SILICON (PE LOCOS);

SEMICONDUCTING SILICON;

EID: 0032075755     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838532     Document Type: Article

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