New scanning photoluminescence technique for mapping the lifetime and the doping density: Application to carbon doped InGaAs/InP layers and heterostructures

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 525-528

  Krawczyk, S K ^a   Bejar, M ^a   Nuban, M F ^a   Blanchet, R C ^a   Sermage, B ^a   Benchimol, J L ^a   Hong, K ^a   Cui, D ^a   Pavlidis, D ^a  

^a ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL BEAM EPITAXY; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL RESOLVING POWER; PHOTOLUMINESCENCE; SCANNING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

SCANNING PHOTOLUMINESCENCE TECHNIQUE; WAFER SCALE MAPPINGS;

HETEROJUNCTIONS;

EID: 0030646578     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)