Low-frequency noise characterization of high- A nd low-reliability AlGaAs/GaAs single HBTs

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 447-450

  Mohammadi, S ^a   Pavlidis, D ^a   Bayraktaroglu, B ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM GALLIUM ARSENIDE; GALLIUM COMPOUNDS; HETEROJUNCTION BIPOLAR TRANSISTORS; SPURIOUS SIGNAL NOISE;

BASE EMITTERS; DC CHARACTERISTICS; DEVICE DESIGN; GENERATION RECOMBINATION; LAYER STRUCTURES; LOW-FREQUENCY NOISE; PROCESSING TECHNOLOGIES; RELIABILITY CHARACTERISTICS;

RELIABILITY;

EID: 0009013542     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711691     Document Type: Conference Paper

References (7)

1. M. A. Khatibzadeh and B. Bayraktaroglu, IEEE Microwave Symposium Technical Digest, 1990, pp. 993-996.
2. B. Bayraktaroglu, et at, IEEE MTT-S Microwave and Millimeter-wave Monolithic Circuits Symposium Digest, 1990, pp. 43-46.
3. M. E. Hafizi, et al., GaAs IC Symposium Technical Digest, Oct. 1990, pp. 329-332
4. T. Henderson, IEEE International Electron Device Meeting, 1995, pp. 811-814.
5. L. K. J. Vandamme, IEEE Trans. Electron Devices, Vol. 41, No. 11, Nov. 1994.
6. J. Stich, TWHM Workshop, Sapparo, Japan, Aug. 1996.
7. M, Tutt, et al., Proceeding of the iS International Symposium on GaAs and Rel. Comp., 1991