Large negative magnetoresistance introduced by line dislocations in a modulation doped Ga0.25In0.75As/InP quantum well

Superlattices and Microstructures

Volumn 21, Issue 2, 1997, Pages 231-236

  Ramvall, P ^a   Carlsson, N ^a   Omling, P ^a   Samuelson, L ^a   Seifert, W ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

High mobility; Line dislocations; Magnetic breakdown; Quantum hall; Shubnikov de Hass; Ternary alloy

Indexed keywords

DISLOCATIONS (CRYSTALS); MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTRON GAS; MAGNETIC BREAKDOWN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030644196     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0187     Document Type: Article

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