Pressure-controlled GaN MBE growth using a hollow anode nitrogen ion source

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 221-226

  Leung, M S H ^a   Klockenbrink, R ^a   Kisielowshi, C ^a   Fujii, H ^a   Kruger, J ^a   Sudhir, G S ^a   Anders, A ^a   Liliental Weber, Z ^a   Rubin, M ^a   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; ION BEAMS; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH;

EXCITONIC PHOTOLUMINESCENCE; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030697684     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)