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Volumn 86, Issue 11, 1999, Pages 6468-6473

A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0002624333     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371710     Document Type: Article
Times cited : (7)

References (23)
  • 18
    • 0027806358 scopus 로고
    • Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed base
    • New York
    • H. Sugahara, J. Nagano, T. Nittono, and K. Ogawa, Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed base, Proc. 1993 IEEE GaAs IC Symp. Tech. Dig., New York (1993), pp. 115-118.
    • (1993) Proc. 1993 IEEE GaAs IC Symp. Tech. Dig. , pp. 115-118
    • Sugahara, H.1    Nagano, J.2    Nittono, T.3    Ogawa, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.