Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 337-340

  Richter, E ^a   Kurpas, P ^a   Sato, M ^a,c   Trapp, M ^b   Zeimer, U ^a   Hahle S ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b RTG Mikroanalyse GmbH Berlin   (Germany)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Carbon; Heterojunction bipolar transistors; Metal organic vapour phase epitaxy

Indexed keywords

ANNEALING; CARBON; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

CARBON TETRABROMIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0006460874     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01736-9     Document Type: Article

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