20Gbit/s regenerative receiver IC using InP/InGaAs double-heterostructure bipolar transistors

Electronics Letters

Volumn 33, Issue 2, 1997, Pages 159-160

  Sano, E ^a   Kurishima, K ^a   Yamahata, S ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Gallium indium arsenide; Heterojunction bipolar transistors; Indium phosphide; Integrated circuits; Optical receivers; Wavelength division multiplexing

Indexed keywords

FLIP FLOP CIRCUITS; FREQUENCY DIVISION MULTIPLEXING; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; PHASE LOCKED LOOPS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; TIMING CIRCUITS;

REGENERATIVE RECEIVERS;

PHOTODETECTORS;

EID: 0030734474     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970101     Document Type: Article

References (6)

1. KOBAYASHI, Y., AKATSU, Y., NAKAGAWA, K., KIKUCHI, H., and IMAI, Y.: 'Compact 10-Gbit/s optical transmitter and receiver circuit packs', IEEE Trans., 1995, MTT-43, pp. 1916-1922
2. NODA, A., TAKAHASHI, K., ISOGAI, T., IKEUCHI, T., YONEDA, I., SASAGAWA, M., KONISHI, C., and FUJITA, S.: 'Fully integrated 10Gb/s optical transmitter module and receiver module'. Proc. 21st Eur. Conf. on Opt. Comm. (ECOC'95), September 1995, pp. 669-672
3. YAMAHATA, S., KURISHIMA, K., NAKAJIMA, H., and SANO, E.: 'Application of small scale InP/InGaAs DHBTs to single-chip 20-Gbit/s regenerative receiver circuits with extremely low power dissipation'. Ultrafast Electron. Optoelectron., March 1997, (Invited paper)
4. CHAU, H.-F., LIU, W., and BEAM, E.A.: 'InP-based HBTs and their perspective for microwave applications'. Proc. 7th Int. Conf. on InP and Related Materials, Sapporo, Japan, May 1995, pp. 640-643
5. max InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal shaped emitter'. IEEE GaAs IC Symp. Tech. Dig., San Diego, CA, October 1995, pp. 163-166
6. ISHIHARA, N., FUJITA, S., TOGASHI, M., HINO, S., ARAI, Y., TANAKA, N., KOBAYASHI, Y., and AKAZAWA, Y.: '3.5-Gb/s X 4-ch Si bipolar LSI's for optical interconnection', IEEE J. Solid-State Circuits, 1995, SC-30, pp. 1493-1501