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Volumn 35, Issue 9 B, 1996, Pages
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Hydrogen diffusion in C-doped InGaAs
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CARBON;
HYDROGEN;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
MOCVD;
DIFFUSION IN SOLIDS;
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EID: 0030233970
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.l1155 Document Type: Article |
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Times cited : (8)
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References (14)
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