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Volumn 11, Issue 3, 1996, Pages 114-120
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InP-based heterojunction bipolar transistors: recent advances and thermal properties
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN;
ELECTRIC CURRENTS;
ELECTRIC PROPERTIES;
HETEROJUNCTIONS;
OSCILLATIONS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
TECHNOLOGY;
THERMAL CONDUCTIVITY OF SOLIDS;
BASE COLLECTOR REVERSE SATURATION CURRENT;
BREAKDOWN VOLTAGE;
COLLECTOR LAYER;
CURRENT GAIN CUTOFF FREQUENCY;
DEVICE FUNCTION TEMPERATURE;
MAXIMUM FREQUENCY OF OSCILLATION;
SUBCOLLECTOR LAYER;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0030084068
PISSN: 08952477
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1098-2760(19960220)11:3<114::AID-MOP2>3.3.CO;2-1 Document Type: Article |
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Times cited : (7)
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References (32)
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