Fundamentals of MRAM technology

Journal of Superconductivity and Novel Magnetism

Volumn 15, Issue 1, 2002, Pages 19-25

  Slaughter, J M ^a   Dave, R W ^a   DeHerrera, M ^a   Durlam, M ^a   Engel, B N ^a   Janesky, J ^a   Rizzo, N D ^a   Tehrani, S ^a  

^a MOTOROLA INC   (United States)

Author keywords

Magnetic random access memory; Spin dependent tunnelling

Indexed keywords

MAGNETIC BITS; MAGNETIC TUNNEL JUNCTIONS (MTJ); MAGNETORESISTANCE RANDOM ACESS MEMORY (MRAM); SPIN DEPENDENT TUNNELING;

CMOS INTEGRATED CIRCUITS; COMPUTATIONAL COMPLEXITY; COSTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; MAGNETORESISTANCE; NONVOLATILE STORAGE; TRANSISTORS;

RANDOM ACCESS STORAGE;

EID: 0001786886     PISSN: 15571939     EISSN: 15571947     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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