Transmission type RF single electron transistor operation of a semiconductor quantum dot

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2338-2340

  Fujisawa, Toshimasa ^a   Hirayama, Yoshiro ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Coulomb blockade; Quantum dot; RF SET; Single electron transistor; Transmission

Indexed keywords

ELECTRIC POTENTIAL; ELECTROMETERS; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; INTEGRATED CIRCUIT TESTING; ION IMPLANTATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM GALLIUM ARSENIDE; COULOMB BLOCKADE; SINGLE ELECTRON TRANSISTOR; SINGLE PARTICLE ENERGY;

TRANSISTORS;

EID: 0033689826     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2338     Document Type: Article

References (5)

1. H. Grabert and M. H. Devoret: Single Charge Tunneling, Coulomb Blockade Phenomena in Nanostructyures, NATO ASI series B294.
2. T. H. Oosterkamp, T. Fujisawa, W. G. van der Wiel, K. Ishibashi, R. V. Hijman, S. Tarucha and L. P. Kouwenhoven: Nature 395 (1998) 873.
3. T. Fujisawa, T. H. Oosterkamp, W. G. van der Wiel, B. W. Broer, R. Aguado, S. Tarucha and L. P. Kouwenhoven: Science 282 (1998) 932.
4. B. Starmark, T. Henning, T. Claeson, P. Delsing and A. N. Korotkov: J. Appl. Phys. 86 (1999) 2132.
5. R. J. Schelkopf, P. Wahlgren, A. A. Kozhevnikov, P. Delsing and D. E. Prober: Science 280 (1998) 1238.