High Speed SiGe-HBT With Very Low Base Sheet Resistivity

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 79-81

  Kasper, E ^a,b   Gruhle, A ^a   Kibbel, H ^a  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

% REDUCTIONS; 100 GHZ; BASE SHEET; BORON-DOPING; HIGH SPEED; LOWEST R; SHEET RESISTIVITY; SIGE HBTS; SIGE LAYERS;

SI-GE ALLOYS; MOLECULAR BEAM EPITAXY;

BIPOLAR TRANSISTORS; BORON; DOPING (ADDITIVES); HETEROJUNCTIONS; SEMICONDUCTOR MATERIALS;

BASE SHEET RESISTIVITY; DOPANT PROFILES; DOUBLE HETEROSTRUCTURE BARRIERS;

EID: 0027815541     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. G.L. Patton et al., IEEE-EDL 11, 171 (1990)
2. T.I. Kamins et al., Techn.Dig. IEDM, 647 (1989)
3. A. Gruhle et al., IEEE-EDL 13, 206 (1992)
4. A. Gruhle et al., Electronics Lett 29, 415 (1993)
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6. M.L. Greene et al., Thin Solid Films 184, 107 (1990)
7. E. Kasper et al., submitted to Jap. J.Appl.Phys.
8. A. Gruhle, will be published
9. S. Luryi, 14th Cornell Conference, Aug. 1993