Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 21-26

  Kurokawa, A ^a   Maeda, T ^a   Sakamoto, K ^a   Itoh, H ^a   Nakamura, K ^b   Koike, K ^c   Moon, D W ^c   Ha, Y H ^d   Ichimura, S ^a   Ando, A ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Iwatani International Corporation   (Japan)

^c Korea Research Institute of Standards and Science   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; FILM PREPARATION; OXIDATION; OZONE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILICA; STOICHIOMETRY; SUBSTRATES; SURFACE STRUCTURE; SURFACE TOPOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

MEDIUM ENERGY ION SCATTERING SPECTROSCOPY; ULTRAFLAT;

ULTRATHIN FILMS;

EID: 0033313605     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-21     Document Type: Conference Paper

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