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Volumn 198-200, Issue PART 2, 1996, Pages 1146-1150
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Prospects for utilizing low temperature amorphous to crystalline phase transformation to define circuit elements; a new frontier for very large scale integrated technology
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CRYSTALLIZATION;
DEPOSITION;
DIFFUSION;
ETCHING;
SEMICONDUCTING SILICON;
THIN FILMS;
VLSI CIRCUITS;
IN SITU CIRCUIT WRITING PROCESS;
MASK PATTERNING;
NANOMETER SCALE CIRCUIT ELEMENTS;
PHASE TRANSITIONS;
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EID: 0030563225
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-3093(96)00101-9 Document Type: Article |
Times cited : (9)
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References (14)
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