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Volumn 198-200, Issue PART 2, 1996, Pages 1146-1150

Prospects for utilizing low temperature amorphous to crystalline phase transformation to define circuit elements; a new frontier for very large scale integrated technology

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; DEPOSITION; DIFFUSION; ETCHING; SEMICONDUCTING SILICON; THIN FILMS; VLSI CIRCUITS;

EID: 0030563225     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00101-9     Document Type: Article
Times cited : (9)

References (14)
  • 3
    • 30244437771 scopus 로고
    • PhD Thesis, Department of Electrical Chemistry, The Graduate School at Nagatsuta, Tokyo Institute of Technology, Yokohama, Japan
    • M. Nakata, PhD Thesis, Department of Electrical Chemistry, The Graduate School at Nagatsuta, Tokyo Institute of Technology, Yokohama, Japan (1992).
    • (1992)
    • Nakata, M.1
  • 9
    • 30244432611 scopus 로고
    • private communication
    • J. Hoyt, private communication (1995).
    • (1995)
    • Hoyt, J.1
  • 14
    • 30244479342 scopus 로고
    • private communication
    • R.W.F. Pease, private communication (1995).
    • (1995)
    • Pease, R.W.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.