Fabrication of high quality silicon related films with band-gap of 1.5 eV by chemical annealing

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 1046-1049

  Futako, W ^a   Yoshino, K ^a   Nakamura, K ^a   Fortmann, C M ^b   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b STONY BROOK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; AMORPHOUS SILICON; ANNEALING; ARGON; DEFECTS; ENERGY GAP; GERMANIUM; HYDROGEN; ION BOMBARDMENT; MECHANICAL PERMEABILITY; SUBSTRATES; TEMPERATURE;

AMORPHOUS SILICON GERMANIUM HYDROGEN; CHEMICAL ANNEALING; DEFECT DENSITY; HIGH QUALITY SILICON RELATED FILMS; HYDROGEN CONTENT; HYDROGEN PERMEATION; SUBSTRATE TEMPERATURE;

AMORPHOUS FILMS;

EID: 17344382922     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00037-3     Document Type: Article

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