Intentional reconstruction of silicon network on the surface and within sub-surface by H and Ar

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 495-500

  Futako, W ^a   Fukutani, K ^a   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ARGON; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; ENERGY GAP; GLOW DISCHARGES; HYDROGEN; HYDROGENATION; PLASMAS; RELAXATION PROCESSES; THIN FILMS;

CHEMICAL ANNEALING; HYDROGENATED AMORPHOUS SILICON; STRUCTURAL RELAXATION;

AMORPHOUS FILMS;

EID: 0031335284     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-495     Document Type: Conference Paper

References (7)