Characterization of polymer formation during SiO2 etching with different fluorocarbon gases (CHF3, CF4, C 4F8)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3212, Issue , 1997, Pages 376-382

  Loong, S Y ^a   Lee, H K ^a   Chan, L ^b   Zhou, M S ^b   Loh, F C ^a   Tan, K L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

AFM; C F ratio; C4F8; CF 4; CHF3; Fluorocarbon polymer; O2 strip; SiO2 etching; XPS

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; IMAGE ENHANCEMENT; ION BOMBARDMENT; IONS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PHOTORESISTS; PLASMAS; POLYMER BLENDS; POLYMERS; SILICON COMPOUNDS; TABLE LOOKUP;

AFM; C/F RATIO; C4F8; CF 4; CHF3; FLUOROCARBON POLYMER; O2 STRIP; SIO2 ETCHING; XPS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0001306730     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284614     Document Type: Conference Paper

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