Contact etching process characterization by using angular X-ray photoelectron spectroscopy technique

Journal of the Electrochemical Society

Volumn 143, Issue 4, 1996, Pages 1347-1354

  Peignon, M C ^a   Clenet F ^a   Turban, G ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL MODIFICATION; FLUOROCARBONS; MATHEMATICAL MODELS; PLASMA ETCHING; PLASMAS; SEMICONDUCTING SILICON; SILICA; STRIPPING (REMOVAL); SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

MONOCHROMATIZED X RAY SOURCE; POSTETCHING TREATMENT; TWO LAYER MODEL;

SURFACE PROPERTIES;

EID: 0030128695     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836641     Document Type: Article

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