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Volumn 75, Issue 20, 1999, Pages 3153-3155

Direct gap in ordered silicon carbon alloys

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001284438     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125261     Document Type: Article
Times cited : (9)

References (28)
  • 10
    • 0004158438 scopus 로고    scopus 로고
    • IHP-Frankfurt/Oder, obtainable by electronic mail from Methfessel@ihp-ffo.de
    • M. Methfessel and M. van Schilfgaarde, NFP Manual 1.01, (IHP-Frankfurt/Oder, 1997); obtainable by electronic mail from Methfessel@ihp-ffo.de
    • (1997) NFP Manual 1.01
    • Methfessel, M.1    Van Schilfgaarde, M.2
  • 12
    • 85034135173 scopus 로고    scopus 로고
    • note
    • The alloy lattice constant is only 0.5% smaller than that of Si. While the band gap changes slightly with the choice of the lattice constant, the valley ordering remains unchanged.
  • 16
    • 0033554955 scopus 로고    scopus 로고
    • D. V. Singh, K. Rim, T. O. Mitchell, J. L. Hoyt, and J. F. Gibbons, J. Appl. Phys. 85, 978 (1999); 85, 985 (1999).
    • (1999) J. Appl. Phys. , vol.85 , pp. 985
  • 18
    • 85034136928 scopus 로고    scopus 로고
    • note
    • We also see a strong configuration dependence in the gap. For example, a 32-atom supercell produced a zero gap in the CuPt structure and 0.5 eV gap in the fee structure.
  • 24
    • 85034138757 scopus 로고    scopus 로고
    • note
    • For silicon, the LDA band gap is smaller than the experimental value by 0.7 eV. The calculated direct absorption in silicon at 2.4 eV shown in Fig. 3 is about 0.7 eV lower than the corresponding experimental value.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.