Calculation of depletion layer thickness by including the mobile carriers

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 185-188

  Mohammadi, Saeed ^a   Selvakumar, C R ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BIPOLAR TRANSISTORS; CALCULATIONS; COMPUTER SIMULATION; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS;

CONVENTIONAL DEPLETION REGION; CONVENTIONAL MODEL; ELECTRON DISTRIBUTION; MOBILE CARRIERS; NET CHARGE DENSITY; THERMAL GENERATION;

CHARGE CARRIERS;

EID: 0029776508     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477616     Document Type: Article

References (4)

1. D. J. Roulston, Bipolar Semiconductor Devices,. New York: McGraw Hill, 1990.
2. A.R. Frederickson and P. Rabkin, "Simple model for carrier densitie in the depletion region of p-n junctions," IEEE Trans. Electron Devices roi. 40 no. 5, pp. 994-1000, May 1993.
3. K. Suzuki and N. Nakayaraa, "Base transit time of shallow base bipola transistors considering velocity saturation at base-collector junction, IEEE 'irons. Electron Devices, vol. 39 no. 3, pp. 623-628, Mar. 1992.
4. TMA MEDICI User's Manual, Version 1, vol. 1, Mar. 1992.