A novel non-destructive characterization method of electronic properties of pre- and post-processing silicon surfaces based on ultrahigh-vacuum contactless capacitance-voltage measurements

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2349-2354

  Yoshida, Toshiyuki ^a   Hasegawa, Hideki ^a   Sakai, Takamasa ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b DAINIPPON SCREEN MFG CO LTD   (Japan)

Author keywords

Contactless C V; Fermi level pinning; Hydrogen termination; Surface property; Ultrahigh vacuum; Ultrathin oxynitride

Indexed keywords

EID: 0001197440     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2349     Document Type: Article

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