Si dimer chain on Si(100)-2 × 1: H Surface fabricated by scanning tunneling microscope

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. B, 1996, Pages 3734-3737

  Huang, Dehuan ^a   Yamamoto, Yoshihisa ^a,b  

^a NTT CORPORATION   (Japan)

^b STANFORD UNIVERSITY   (United States)

Author keywords

Atomic chain; Monohydride silicon surface; Scanning tunneling microscope; Single atom manipulation

Indexed keywords

ATOMS; CRYSTAL DEFECTS; ELECTRIC CURRENTS; ETCHING; EVAPORATION; HYDROGEN; SEMICONDUCTING SILICON; SURFACES;

ATOMIC CHAIN; DRY ETCHING PROCESS; ELECTRON EXCITATION; HYDROGEN TERMINATION; INSULATING SURFACE; MONOHYDRIDE SILICON SURFACE; SINGLE ATOM MANIPULATION; ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPE;

SCANNING TUNNELING MICROSCOPY;

EID: 0030169988     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3734     Document Type: Article

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