Emission current saturation of the p-type silicon gated field emitter array

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 5, 1996, Pages 3357-3360

  Hirano, Takayuki ^a,b   Kanemaru, Seigo ^a   Itoh, Junji ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001383380     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588535     Document Type: Article

References (18)

1. T. Utsumi, IEEE Trans. Electron Devices 38, 2276 (1991).
2. C. A. Spindt, C. E. Holland, A. Rosengreen, and I. Brodie, IEEE Trans. Electron Devices 38, 2355 (1991).
3. H. H. Busta, J. Micromech. Microeng. 2, 43 (1992).
4. G. N. Fursey and N. V. Egorov, Phys. Status. Solidi 32, 23 (1969).
5. A. F. Yatsenko, Phys. Status. Solidi A 1, 333 (1970).
6. L. M. Baskin, O. I. Lvov, and G. N. Fursey, Phys. Status. Solidi B 47, 49 (1971).
7. R. N. Thomas, R. A. Wickstrom, D. K. Schroder, and H. C. Nathanson, Solid State Electron. 17, 155 (1974).
8. D. K. Schroder, R. N. Thomas, J. Vine, and H. C. Nathanson, IEEE Trans. Electron Devices ED-21, 785 (1974).
9. R. Z. Bakhtizin, J. Phys. Colloque C6, Tome 49, 155 (1988).
10. E. C. Boswell and P. R. Wilshaw, J. Vac. Sci. Technol. B 11, 412 (1993).
11. K. Sawada, K. Ji, and T. Ando, Jpn. J. Appl. Phys. 33, L1345 (1994).
12. S. Kanemaru, T. Hirano, H. Tanoue, and J. Itoh, J. Vac. Sci. Technol. B 14, 1885 (1996).
13. T. Hirano, S. Kanemaru, H. Tanoue, and J. Itoh, Jpn. J. Appl. Phys. 34, 6907 (1995).
14. K. Betsui, Technical. Digest Fourth International Vacuum Microelectronics Conference, Nagahama, Japan, 1991, p. 26 (unpublished).
15. A. Ting, C. M. Tang, T. Swyden, D. Maccarthy, and M. Peckerar, Technical. Digest Fourth International Vacuum Microelectronics Conference, Nagahama, Japan, 1991, p. 200 (unpublished).
16. H. F. Gray, U.S. Patent No. 5 359 256 (1992).
17. K. Yokoo, M. Arai, M. Mod, J. Bae, and S. Ono, J. Vac. Sci. Technol. B 13, 491 (1995).
18. G. Hashiguchi, H. Mimura, and H. Fujita, Jpn. J. Appl. Phys. 35, L84 (1996).