Combined Raman and transmission spectroscopy of ZnTe under pressure

Solid State Communications

Volumn 107, Issue 10, 1998, Pages 537-541

  Frogley, M D ^a   Dunstan, D J ^a   Palosz, W ^b  

^a QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^b NASA MARSHALL SPACE FLIGHT CENTER   (United States)

Author keywords

A. semiconductors; D. electronic band structure; D. optical properties; D. phonons; E. strain; High pressure

Indexed keywords

BAND STRUCTURE; ELECTRONIC DENSITY OF STATES; ENERGY GAP; HIGH PRESSURE EFFECTS; OPTICAL PROPERTIES; PHONONS; RAMAN SPECTROSCOPY; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAP; ZINC TELLURIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032118345     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00276-2     Document Type: Article

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