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Physical Review B

Volumn 12, Issue 12, 1975, Pages 5824-5839

Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron

(1) Watkins, G D a,b

a GE GLOBAL RESEARCH (United States)

b LEHIGH UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000605251 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.12.5824 Document Type: Article

Times cited : (217)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.