Atomistic model of transient enhanced diffusion and clustering of boron in silicon

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 341-346

  Pelaz, L ^a   Gilmer, G H ^a   Jaraiz, M ^a   Gossmann, H J ^a   Rafferty, C S ^a   Eaglesham, D J ^a   Poate, J M ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DIFFUSION IN SOLIDS; ION IMPLANTATION; MATHEMATICAL MODELS; NUCLEATION;

TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0031364551     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-341     Document Type: Conference Paper

References (12)