Hydrogen and disilane adsorption on low energy ion-roughened Si (100)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1473-1477

  Gong, B ^a   Jo, S ^b   Hess, G ^a   Parkinson, P ^a   Ekerdt, J G ^a  

^a The University of Texas at Austin   (United States)

^b Gachon University College of Medicine   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION PROBABILITIES; BULK DEFECTS; DEFECT SITES; DIHYDRIDES; DISILANES; ION ENERGIES; ION SPUTTERING; LOW ENERGIES; NEAR-SURFACE; SI(1 0 0); SMOOTH SURFACE; SPUTTERING TIME; SURFACE AREA; SURFACE DANGLING BONDS;

ACTIVATION ENERGY; ADSORPTION; DANGLING BONDS; HYDROGEN BONDS; INERT GASES; ION BOMBARDMENT; IONS; SILICON; SPUTTERING; SURFACE PROPERTIES; SURFACE ROUGHNESS; TEMPERATURE PROGRAMMED DESORPTION;

SURFACE DEFECTS;

EID: 0000917993     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581172     Document Type: Article

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