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Volumn 115, Issue 1-4, 1996, Pages 572-576

Surface atomic vacancies created by ion bombardment and desorption

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DESORPTION; IONS; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACES; THERMAL EFFECTS;

EID: 0030564390     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01524-8     Document Type: Article
Times cited : (4)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.