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Volumn 115, Issue 1-4, 1996, Pages 572-576
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Surface atomic vacancies created by ion bombardment and desorption
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
DESORPTION;
IONS;
SCANNING TUNNELING MICROSCOPY;
SILICON;
SURFACES;
THERMAL EFFECTS;
DIMER VACANCIES;
SURFACE ATOMIC VACANCIES;
ION BOMBARDMENT;
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EID: 0030564390
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/0168-583X(95)01524-8 Document Type: Article |
Times cited : (4)
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References (18)
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