Transport properties of two quantum dots connected in series formed in silicon inversion layers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 4 A, 1996, Pages

  Matsuoka, H ^a   Ahmed, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR QUANTUM DOTS; TUNNEL JUNCTIONS;

CO-TUNNELING; COULOMB BLOCKADE; SILICON INVERSION LAYER;

QUANTUM ELECTRONICS;

EID: 0030121349     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l418     Document Type: Article

References (14)