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Journal of Applied Physics

Volumn 87, Issue 8, 2000, Pages 3696-3699

Effects of donor concentration on transient enhanced diffusion of boron in silicon

(2) Solmi, S a Bersani, M b

a CNR (Italy)

b ITC IRST (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000906414 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.372402 Document Type: Article

Times cited : (15)

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