Arsenic trapping and its effect on enhanced diffusion

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 169-174

  Brindos, Richard ^a   Law, Mark E ^a   Jones, Kevin S ^a   Andideh, Ebrahim ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; DISSOLUTION; FERMI LEVEL; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ARSENIC TRAPPING;

SEMICONDUCTING SILICON;

EID: 0032655302     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-169     Document Type: Article

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