Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron-interstitial cluster formation

Applied Physics Letters

Volumn 74, Issue 14, 1999, Pages 2038-2040

  Lilak, A D ^a   Earles, S K ^a   Law, M E ^a   Jones, K S ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; ELECTRIC RESISTANCE MEASUREMENT; ION IMPLANTATION; NUCLEATION; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

BORON INTERSTITIAL CLUSTERS (BIC); SPREADING RESISTANCE MEASUREMENTS;

SEMICONDUCTOR JUNCTIONS;

EID: 0032613841     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123749     Document Type: Article

References (9)

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