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Volumn 6, Issue 10, 1997, Pages 1378-1380
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Deep luminescent centres in electron-irradiated 6H SiC
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Author keywords
Deep levels; Defects; Electron irradiation; Photoluminescence; SiC; Vacancy complexes
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Indexed keywords
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EID: 0039800985
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-9635(97)00098-8 Document Type: Article |
Times cited : (9)
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References (7)
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