The neutral silicon vacancy in 6H and 4H SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 473-476

  Sorman E ^a   Chen, W M ^a   Son, N T ^a   Hallin, C ^a   Lindstrom J L ^a   Monemar, B ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Photoluminescence; SiC; Silicon Vacancy

Indexed keywords

BAND STRUCTURE; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

NEUTRAL SILICON VACANCY;

SILICON CARBIDE;

EID: 0031648148     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.473     Document Type: Article

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