A relation between surface oxide and oxygen-defect complexes in solid-phase epitaxial Si regrown from ion-beam-amorphized Si layers

Applied Physics Letters

Volumn 76, Issue 11, 2000, Pages 1410-1412

  Petkov, Mihail P ^a   Chen, Claudine M ^b   Atwater, Harry A ^b   Rassiga, Stefano ^a   Lynn, Kelvin G ^a  

^a WASHINGTON STATE UNIVERSITY   (United States)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000694132     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126047     Document Type: Article

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