Modeling C-V shifts in Boron/BF2-implanted capacitors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 807-810

  Vuong, H H ^a   Rafferty, C S ^a   Mansfield, W ^a   Luftman, H ^a   Jacobson, D ^a   Pinto, M R ^a   Eshraghi, S A ^a   McMacken, J R ^b   Ham, T E ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-V CURVE; DOPING PROFILES; FLATBAND SHIFT; IMPLANTED SPECIES; INTERFACE TRAPS;

BORON; BORON COMPOUNDS; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; MATHEMATICAL MODELS; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; STATISTICAL METHODS;

BORON FLUORIDE; IMPLANT DOSE; INTERFACE TRAP MODEL;

CAPACITORS;

EID: 0030383521     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554102     Document Type: Conference Paper

References (8)

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