Selective distribution of arsenic precipitates in low-temperature-grown III-V heterostructures

Applied Physics Letters

Volumn 75, Issue 1, 1999, Pages 52-54

  Chang, M N ^a   Yeh, N T ^a   Lu, C M ^a   Hsieh, K C ^b   Chyi, J I ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; BOND STRENGTH (CHEMICAL); PRECIPITATION (CHEMICAL); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE; INDIUM ALUMINUM ARSENIDE;

HETEROJUNCTIONS;

EID: 0032620414     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124274     Document Type: Article

References (12)

1. M. R. Melloch, N. Otsuka, K. Mahalingam, C. L. Chang, P. D. Kirchner, J. M. Woodall, and A. C. Warren, Appl. Phys. Lett. 61, 177 (1992).
2. J. P. Ibbetson, J. S. Speck, A. C. Gossard, and U. K. Mishra, Appl. Phys. Lett. 62, 169 (1993).
3. J. P. Ibbetson, J. S. Speck, A. C. Gossard, and U. K. Mishra, Appl. Phys. Lett. 62, 2209 (1993).
4. M. R. Melloch, N. Otsuka, K. Mahalingam, C. L. Chang, J. M. Woodall, G. D. Pettit, P. D. Kirchner, F. Cardone, A. C. Warren, and D. D. Nolte, J. Appl. Phys. 72, 3509 (1992).
5. M. N. Chang, K. C. Hsieh, J.-W. Pan, J.-I. Chyi, and T.-E. Nee, Appl. Phys. Lett. 72, 587 (1998).
6. K. Mahalingam, N. Otsuka, M. R. Melloch, J. M. Woodall, and A. C. Warren, J. Vac. Sci. Technol. B 10, 812 (1992).
7. K. Mahalingam, N. Otsuka, M. R. Melloch, and J. M. Woodall, Appl. Phys. Lett. 60, 3253 (1992).
8. K. C. Hsieh, K. Y. Hsieh, Y. L. Hwang, T. Zhang, and R. M. Kolbas, Appl. Phys. Lett. 68, 1790 (1996).
9. D. E. Bliss, W. Walukiewicz, and E. E. Haller, J. Electron. Mater. 22, 1401 (1993).
10. S. Fleischer, C. D. Beling, S. Fung, W. R. Nieveen, J. E. Squire, J. Q. Zheng, and M. Missous, J. Appl. Phys. 81, 190 (1997).
11. E. S. Harmon, M. R. Melloch, J. M. Woodall, D. D. Nolte, N. Otsuka, and C. L. Chang, Appl. Phys. Lett. 63, 2248 (1993).
12. M. N. Chang, K. C. Hsieh, T.-E. Nee, C. C. Chuo, and J.-I. Chyi, Behavior of Arsenic Precipitation in Low-Temperature Grown III-V Arsenides, 10th International Conference on Molecular Beam Epitaxy, Cannes, 1998, p. 220.