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Volumn 73, Issue 26, 1998, Pages 3890-3892

Andreev reflection in Si-engineered Al/InGaAs hybrid junctions

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EID: 0000556722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122926     Document Type: Article
Times cited : (30)

References (19)
  • 4
    • 0000433883 scopus 로고
    • A. F. Andreev, Zh. Éksp. Teor. Fiz. 46, 1823 (1964) [Sov. Phys. JETP 19, 1228 (1964)].
    • (1964) Sov. Phys. JETP , vol.19 , pp. 1228
    • Andreev1
  • 12
    • 21944434448 scopus 로고    scopus 로고
    • The voltage drop across the junction amounts to about half of the applied bias, due to the series-resistance contribution
    • The voltage drop across the junction amounts to about half of the applied bias, due to the series-resistance contribution.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.