Comparison of experimental and theoretical Doppler broadening line-shape parameters

Applied Surface Science

Volumn 149, Issue 1, 1999, Pages 227-233

  Eichler, S ^a   Krause Rehberg, R ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DOPPLER EFFECT; SPECTROSCOPIC ANALYSIS;

DEFECT-SPECIFIC ANNIHILATION PARAMETERS; DOPPLER BROADENING SPECTROSCOPY; LINE-SHAPE PARAMETERS; VACANCY CLUSTERS;

SEMICONDUCTING SILICON;

EID: 0032657929     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00206-8     Document Type: Article

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