Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 917-923

  Feng, Z C ^a,d,e   Rohatgi, A ^a   Tin, C C ^b   Hu, R ^b   Wee, A T S ^c   Se, K P ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d EMORY UNIVERSITY   (United States)

^e EMCORE CORPORATION   (United States)

Author keywords

4H SiC; Fourier infrared reflectance; Low pressure chemical vapor deposition; Raman scattering; X ray diffraction; X ray photoelectron spectroscopy

Indexed keywords

EID: 0342780886     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666658     Document Type: Article

References (26)

1. W.J. Choyke and L. Patrick, Phys. Rev. 127, 1868 (1962).
2. D.R. Hamilton, L. Patrick and W.J. Choyke, Phys. Rev. 138, 1742 (1965).
3. D.L. Barrett and R.B. Campbell, J. Appl. Phys. 38, 53 (1967).
4. M. Kanaya, J. Takahashi, Y. Fujiwara and A. Moritani, Appl. Phys. Lett. 58, 56 (1991).
5. W.R.L. Lambrecht, B. Segall, W. Suttrop, M. Yoganathan, R.P. Devaty, W.J. Choyke, J.A. Edmond, J.A. Powell and M. Alouani, Appl. Phys. Lett. 63, 2747 (1993).
6. W. Götz, A. Schöner, G. Pensl, W, Suttrop, W.J. Choyke, B. Stein and S. Leibenzeder, J. Appl. Phys. 73, 3332 (1993).
7. A. Itoh, H. Akita, T. Kimoto and H. Matsunami, Appl. Phys. Lett. 65, 1400 (1994).
8. N.T. Son, W.M. Chen, O. Kordina, A.O. Konstantinov, B. Monemar, E. Janzén, D.M. Hofman, D. Volm, M. Drechsler and B.K. Meyer, Appl. Phys. Lett. 66, 1074 (1995).
9. C.C. Tin, R. Hu, J. Liu, Y. Vohra and Z.C. Feng, J. Cryst. Growth 158, 509 (1996).
10. Z.C. Feng, C.C. Tin, K.T. Yue, R. Hu, J. Williams, S.C. Liew, Y.G. Foo, S.K.L. Choo, W.E. Ng and S.H. Tang, Mater. Res. Soc. Symp. Proc. 339, 417 (1994); A.T.S. Wee, Z.C. Feng, H.H. Hng, K.L. Tan, C.C. Tin, R. Hu and R. Coston, ibid., p. 411.
11. Z.C. Feng, C.C. Tin, K.T. Yue, R. Hu, J. Williams, S.C. Liew, Y.G. Foo, S.K.L. Choo, W.E. Ng and S.H. Tang, Mater. Res. Soc. Symp. Proc. 339, 417 (1994); A.T.S. Wee, Z.C. Feng, H.H. Hng, K.L. Tan, C.C. Tin, R. Hu and R. Coston, ibid., p. 411.
12. A.T.S. Wee, Z.C. Feng, H.H. Hng, K.L. Tan, C.C. Tin, R. Hu and R. Coston, Appl. Surf. Sci. 81, 377 (1994).
13. Z.C. Feng, C.C. Tin, R. Hu and J. Williams, Thin Solid Films 266, 1 (1995).
14. Z.C. Feng, C.C. Tin, R. Hu and K. T. Yue, Semicond. Sci. & Tech. 10, 1418 (1995).
15. R.T. Holm, P.M. Klein and P.E.R. Nordquist, Jr., J. Appl. Phys. 60, 1479 (1986).
16. H.J. Kim and R.F. Davis, Proc. SPIE 794, 183 (1987).
17. M.F. MacMillan, W.J. Choyke and R.P. Devaty, Amorphous and Crystalline Silicon Carbide IV, eds. C.Y. Yang, M.M. Rahman and G.L. Harris, (Berlin: Springer Verlag, 1992), p. 216.
18. O.S . Heavens, Optical Properties of Thin Solid Films, (London: Butterworths, 1955), p. 112.
19. D.W. Feldman, J.H. Parker, Jr., W.J. Choyke and L. Patrick, Phys. Rev. 173, 787 (1968).
20. M.V. Klein, B.N. Hanguly and P.J. Colwell, Phys. Rev. B 6, 2380 (1972).
21. H. Harima, S.-I. Nakashima and T. Uemura, J. Appl. Phys. 78, 1996 (1995).
22. W.J. Choyke, Z.C. Feng and J.A. Powell, J. Appl. Phys. 64, 3163 (1988).
23. W.J. Choyke and E.D. Palik, Handbook of Optical Constants of Solids, ed. E. D. Palik, (Orlando: Academic Press, 1985), p. 587.
24. Z.C. Feng, AA. Allerman, P.A. Barnes and S. Perkowitz, Appl. Phys. Lett. 60, 1848 (1992).
25. Bartning, Opt. Commun. 4, 78 (1971).
26. C.R.J. Cazaux, Acad. Sci. Ser. B 279, 700 (1970).