Creation of [110]-aligned Si quantum wires encompassed by SiO2 using low-energy separation-by-implanted-oxygen on a V-groove patterned substrate

Applied Physics Letters

Volumn 72, Issue 20, 1998, Pages 2592-2594

  Ishikawa, Yukari ^a   Shibata, N ^a   Fukatsu, S ^b  

^a JAPAN FINE CERAMICS CENTER   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000412366     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121427     Document Type: Article

References (13)

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