Creation of highly-ordered Si nanocrystal dots suspended in SiO2 by molecular beam epitaxy with low energy oxygen implantation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 SUPPL. B, 1997, Pages 4035-4037

  Ishikawa, Yukari ^a   Shibata, Noriyoshi ^a   Fukatsu, Susumu ^b  

^a JAPAN FINE CERAMICS CENTER   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

MBE; Quantum dot; Si nanocrystal; SIMOX; SOI; Suspended in SiO2

Indexed keywords

EID: 0038186352     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4035     Document Type: Article

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