InAs monolayers and the controlled introduction of deep levels in AlGaAs alloys

Applied Physics Letters

Volumn 68, Issue 11, 1996, Pages 1534-1536

  Colombelli, Raffaele ^a   Jancu, Jean Marc ^a   Beltram, Fabio ^a   Sorba, Lucia ^b   Bertho, Denis ^c   Jouanin, Christian ^c  

^a SCUOLA NORMALE SUPERIORE   (Italy)

^b Istituto Nazionale Per la Fisica Della Materia   (United States)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SOLID STATE LASERS;

ALUMINUM GALLIUM ARSENIDE; FULL WIDTH AT HALF MAXIMUM; INDIUM ARSENIDE; PHOTOLUMINESCENCE EXCITATION; STOKES SHIFTS; TIGHT BINDING PARAMETERS; TITANIUM SAPPHIRE LASERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030106289     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115690     Document Type: Article

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