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Applied Physics Letters

Volumn 70, Issue 13, 1997, Pages 1736-1738

Spectroscopic ellipsometric studies of InAs monolayers embedded in GaAs

(3) Rheinlander B a Schmidt, Heidemarie a Gottschalch, V a

a UNIVERSITY OF LEIPZIG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; OPTICAL PROPERTIES; PERMITTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; THICKNESS MEASUREMENT;

INDIUM ARSENIDE; PSEUDODIELECTRIC FUNCTION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031102082 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.118685 Document Type: Article

Times cited : (14)

References (11)

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