Creation and annihilation mechanism of dangling bonds within the a-Si:H growth surface studied by in situ ESR technique

Journal of Non-Crystalline Solids

Volumn 266-269 A, Issue , 2000, Pages 529-533

  Yamasaki, Satoshi ^a   Das, Ujjwal K ^b   Umeda, Takahide ^a   Isoya, Junichi ^a   Tanaka, Kazunobu ^a  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000236841     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-3093(99)00843-1     Document Type: Article

References (9)

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