Probing the elementary surface reactions of hydrogenated silicon PECVD by in-situ ESR

Materials Research Society Symposium - Proceedings

Volumn 536, Issue , 1999, Pages 463-468

  Yamasaki, Satoshl ^a   Malten, Claus ^a   Umeda, Takehide ^a   Isoya, Jun Ichi ^a   Tanaka, Kazunobu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMS; HYDROGEN; HYDROGENATION; PARAMAGNETIC RESONANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACES;

DANGLING BOND INTENSITY; HYDROGENATED SILICON; PLASMA TREATMENTS;

AMORPHOUS SILICON;

EID: 0032591491     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)

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